1 features ? ezbright power chip led rf performance ? 240 mw min. - 450 & 460 nm ? 200 mw min. - 470 nm ? 90 mw min. - 527 nm ? lambertian radiation ? conductive epoxy, solder paste or preforms, or flux eutectic attach ? low forward voltage C 3.6 v typical at 350 ma ? single wire bond structure ? dielectric passivation across epi surface applications ? general illumination C aircraft C decorative lighting C task lighting C outdoor illumination C projection lighting ? white leds ? crosswalk signals ? backlighting ? automotive cree ? ez700? gen ii led data sheet c xxx ez700-s xx 000-2 crees ezbright? leds are the next generation of solid-state led emitters that combine highly effcient ingan materials with crees proprietary optical design and device technology to deliver superior value for high-intensity leds. the optical design maximizes light extraction effciency and enables a lambertian radiation pattern. additionally, these leds are die attachable with conductive epoxy, solder paste or solder preforms, in addition to using the fux eutectic method. these vertically structured, low forward voltage led chips are approximately 170 microns in height. crees ez? chips are tested for conformity to optical and electrical specifcations. these leds are useful in a broad range of applications, such as general illumination, automotive lighting and lcd backlighting. c xxx ez700-sxx000-2 chip diagram top view bottom view ezbright led chip 680 x 680 m t = 170 m backside metallization gold bond pad 150 x 150 m die cross section anode (+); 3 m ausn cathode (-) d a t a s h e e t : c p r 3 d w r e v . b dielectric passivation subject to change without notice. www.cree.com
copyright ? 2008-2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez700 are trademarks of cree, inc. 2 cpr3dw rev. b cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com maximum ratings at t a = 25c note 1 c xxx ez700-s xx 000-2 dc forward current 750 ma peak forward current 1000 ma note 3 led junction temperature 145c reverse voltage 5 v operating temperature range -40c to +100c storage temperature range -40c to +120c typical electrical/optical characteristics at t a = 25c, if = 350 ma note 2 part number forward voltage (v f , v) reverse current [i(vr=5 v), a] full width half max ( d , nm) min. typ. max. max. typ. c450ez700-s xx 000-2 3.0 3.5 3.9 2 20 c460ez700-s xx 000-2 3.0 3.5 3.9 2 21 c470ez700-s xx 000-2 3.0 3.5 3.9 2 22 c527ez700-s xx 000-2 3.1 3.5 4.0 2 35 mechanical specifcations c xxx ez700-s xx 000-2 description dimension tolerance p-n junction area (m) 650 x 650 35 chip area (m) 680 x 680 35 chip thickness (m) 170 25 top au bond pad (m) 150 x 150 25 au bond pad thickness (m) 3.0 1.5 back contact metal area (m) 680 x 680 35 back contact metal thickness (m) 3.0 1.5 notes: 1. maximum ratings are package-dependent. the above ratings were determined using a au-plated to39 header without an encapsulant for characterization. ratings for other packages may differ. the junction temperature should be characterized in a specifc package to determine limitations. assembly processing temperature must not exceed 325c (< 5 seconds). see cree ezbright applications note for assembly-process information. 2. all products conform to the listed minimum and maximum specifcations for electrical and optical characteristics when assembled and operated at 350 ma within the maximum ratings shown above. effciency decreases at higher currents. typical values given are within the range of average expected by the manufacturer in large quantities and are provided for information only. all measurements were made using a au-plated to39 header without an encapsulant. optical characteristics measured in an integrating sphere using illuminance e. 3. this peak forward current specifcation is based on a 400-ms pulse width at a 1/5-duty cycle with a junction temperature of 65c.
copyright ? 2008-2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez700 are trademarks of cree, inc. 3 cpr3dw rev. b cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com standard bins for c xxx ez700-s xx 000-2 led chips are sorted to the radiant fux and dominant wavelength bins shown. a sorted die sheet contains die from only one bin. sorted die kit (c xxx ez700-s xx 000-2) orders may be flled with any or all bins (c xxx ez700-0 xxx- 2) contained in the kit. all radiant fux and all dominant wavelength values shown and specifed are at if = 350 ma. radiant fux values are measured using au-plated to39 headers without an encapsulant. c450ez700-s24000-2 c450ez700-0313-2 c450ez700-0314-2 c450ez700-0315-2 c450ez700-0316-2 c450ez700-0309-2 c450ez700-0310-2 c450ez700-0311-2 C450EZ700-0312-2 c450ez700-0305-2 c450ez700-0306-2 c450ez700-0307-2 c450ez700-0308-2 310 mw 280 mw 240 mw dominant wavelength radiant flux 447.5 nm 450 nm 452.5 nm 445 nm 455 nm c460ez700-s24000-2 c460ez700-0313-2 c460ez700-0314-2 c460ez700-0315-2 c460ez700-0316-2 c460ez700-0309-2 c460ez700-0310-2 c460ez700-0311-2 c460ez700-0312-2 c460ez700-0305-2 c460ez700-0306-2 c460ez700-0307-2 c460ez700-0308-2 310 mw 280 mw 240 mw dominant wavelength radiant flux 457.5 nm 460 nm 462.5 nm 455 nm 465 nm c470ez700-s20000-2 c470ez700-0309-2 c470ez700-0310-2 c470ez700-0311-2 c470ez700-0312-2 c470ez700-0305-2 c470ez700-0306-2 c470ez700-0307-2 c470ez700-0308-2 c470ez700-0301-2 c470ez700-0302-2 c470ez700-0303-2 c470ez700-0304-2 280 mw 240 mw 200 mw dominant wavelength radiant flux 467.5 nm 470 nm 472.5 nm 465 nm 475 nm c527ez700-sxx00-2 c527ez700-0210-2 c527ez700-0211-2 c527ez700-0212-2 c527ez700-0207-2 c527ez700-0208-2 c527ez700-0209-2 c527ez700-0204-2 c527ez700-0205-2 c527ez700-0206-2 c527ez700-0201-2 c527ez700-0202-2 c527ez700-0203-2 150 mw 130 mw 110 mw 90 mw dominant wavelength radiant flux 525 nm 530 nm 535 nm 520 nm
copyright ? 2008-2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez700 are trademarks of cree, inc. 4 cpr3dw rev. b cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com characteristic curves these are representative measurements for the ezbright power chip led product. actual curves will vary slightly for the various radiant fux and dominant wavelength bins. 65% 70% 75% 80% 85% 90% 95% 100% 105% 110% 25 50 75 100 125 150 relative intensity junction temperature ( c) relative light intensity vs. junction temperature - 2 - 1 0 1 2 3 4 5 6 25 50 75 100 125 150 dw shift (nm) junction temperature ( c) dominant wavelength shift vs. junction temperature 65% 70% 75% 80% 85% 90% 95% 100% 105% 110% 25 50 75 100 125 150 relative intensity junction temperature ( c) relative light intensity vs. junction temperature - 2 - 1 0 1 2 3 4 5 6 25 50 75 100 125 150 dw shift (nm) junction temperature ( c) dominant wavelength shift vs. junction temperature - 0.600 - 0.500 - 0.400 - 0.300 - 0.200 - 0.100 0.000 0.100 25 50 75 100 125 150 voltage shift (v) junction temperature ( c) voltage shift vs. junction temperature 0% 25% 50% 75% 100% 125% 150% 175% 200% 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 relative intensity if (ma) relative intensity vs. forward current - 16 - 12 - 8 - 4 0 4 8 12 16 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 dw shift (nm) if (ma) wavelength shift vs. forward current 0% 25% 50% 75% 100% 125% 150% 175% 200% 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 relative intensity if (ma) relative intensity vs. forward current - 16 - 12 - 8 - 4 0 4 8 12 16 0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 dw shift (nm) if (ma) wavelength shift vs. forward current 0 100 200 300 400 500 0 1 2 3 4 5 if (ma) vf (v) forward current vs. forward voltage
copyright ? 2008-2010 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks, and ezbright, ez, and ez700 are trademarks of cree, inc. 5 cpr3dw rev. b cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 www.cree.com radiation pattern this is a representative radiation pattern for the ezbright power chip led product. actual patterns will vary slightly for each chip.
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